Design of edge termination on non-uniform 100-V super-junction trench power MOSFET
نویسندگان
چکیده
منابع مشابه
Design of edge termination on non-uniform 100-V super-junction trench power MOSFET
A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2013
ISSN: 1349-2543
DOI: 10.1587/elex.10.20120797